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PSMN2R1-40PL
N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78
1 February 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
• High efficiency due to low switching & conduction losses • Robust construction for demanding applications • Logic level gate
3. Applications
• Battery-powered tools • Load switching • Motor control • Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig.
PSMN2R1-40PL Datasheet
