Datasheet4U Logo Datasheet4U.com

PSMN1R4-40YLD - N-channel MOSFET

Description

240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Features

  • 240 A capability.
  • Avalanche rated, 100% tested at IAS = 190 A.
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
  • High reliability LFPAK (Power SO8) package, copper-clip, sold.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN1R4-40YLD N-channel MOSFET NXP
PSMN1R4-30YLD N-channel MOSFET NXP
PSMN1R0-30YLC N-channel MOSFET NXP Semiconductors
PSMN1R0-30YLD N-channel MOSFET NXP
PSMN1R0-40YLD N-channel MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PSMN1R4-100ASE N-channel MOSFET
PSMN1R4-30YLD N-channel MOSFET
PSMN1R0-100ASE N-channel MOSFET
PSMN1R0-100CSF N-channel MOSFET
PSMN1R0-25YLD N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology 14 March 2019 Product data sheet 1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240 A capability • Avalanche rated, 100% tested at IAS = 190 A • NextPower-S3 technology delivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage • Optimised for 4.
Published: |