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PSMN069-100YS - N-channel MOSFET

PSMN069-100YS Description

PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Rev.02 * 25 October 2010 Product data sheet 1.Product profile 1.1 Gen.
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

PSMN069-100YS Features

* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency gains in switching power converters
* Improved mechanical and thermal characteristics

PSMN069-100YS Applications

* DC-to-DC converters
* Lithium-ion battery protection
* Load switching
* Motor control
* Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain

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