Datasheet Details
- Part number
- PMZB950UPE
- Manufacturer
- nexperia ↗
- File Size
- 712.11 KB
- Datasheet
- PMZB950UPE-nexperia.pdf
- Description
- P-channel MOSFET
PMZB950UPE Description
PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.
PMZB950UPE Features
* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
PMZB950UPE Applications
* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-s
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