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PMV32UP - P-channel MOSFET

PMV32UP Description

PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev.1 * 11 March 2011 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV32UP Features

* 1.8 V drain-source on-state resistance rated
* Very fast switching

PMV32UP Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj = 25 °C voltage VGS gate-source voltage ID drain current Static characteristics VGS =

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