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PMDT670UPE - dual P-channel MOSFET

PMDT670UPE Description

PMDT670UPE 20 V, 550 mA dual P-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General descrip.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package usin.

PMDT670UPE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMDT670UPE Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics (per

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dual P-channel MOSFET nexperia
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