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PMDT290UCE - N/P-channel MOSFET

PMDT290UCE Description

PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev.1 * 6 October 2011 Product data sheet 1.Product profile 1.1 General de.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic p.

PMDT290UCE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMDT290UCE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C resi

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