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PDTC123EMB - NPN resistor-equipped transistor

Description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA123EMB.

Features

  • 100 mA output current capability.
  • Reduces component count.
  • Built-in bias resistors.
  • Reduces pick and place costs.
  • Simplifies circuit design.
  • AEC-Q101 qualified.
  • Leadless ultra small SMD plastic package.
  • Low package height of 0.37 mm 1.3.

📥 Download Datasheet

Datasheet Details

Part number PDTC123EMB
Manufacturer nexperia
File Size 699.91 KB
Description NPN resistor-equipped transistor
Datasheet download datasheet PDTC123EMB Datasheet

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Full PDF Text Transcription

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SOT883B PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1.
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