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PBSS306NX 100V 4.5A NPN low VCEsat transistor

PBSS306NX Description

PBSS306NX 100 V, 4.5 A NPN low VCEsat transistor 30 September 2025 Product data sheet 1.General .
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PBSS306NX Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

PBSS306NX Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO col

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