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PBHV9115TLH - PNP Transistor

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • Small SMD plastic package.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV9115TLH 150 V, 1 A PNP high-voltage low VCEsat BISS transistor 16 January 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8115TLH 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Small SMD plastic package • AEC-Q101 qualified 3. Applications • Power management • LCD backlighting • LED driver for LED chain module • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.
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