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NXV100XP P-channel Trench MOSFET

NXV100XP Description

NXV100XP 30 V, P-channel Trench MOSFET 12 February 2021 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NXV100XP Features

* Low threshold voltage
* Very fast switching

NXV100XP Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -30 VGS gate-source voltage -12 -

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P-channel Trench MOSFET nexperia
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