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NX7002BKMB N-channel MOSFET

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Description

NX7002BKMB 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package u.

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Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 -

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