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NX5008NBKM N-channel Trench MOSFET

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Description

NX5008NBKM 50 V, N-channel Trench MOSFET 1 September 2020 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package usi.

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Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; T

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