NGD4300-Q100 4A peak high-performance dual MOSFET gate driver

nexperia

Description

NGD4300-Q100 4 A peak high-performance dual MOSFET gate driver Rev.2.1 * 18 July 2025 Product data sheet 1.General .
2.

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Datasheet Specifications

Part number: NGD4300-Q100
Manufacturer: nexperia ↗
File Size: 2.44 MB
Datasheet: NGD4300-Q100-nexperia.pdf
Description: 4A peak high-performance dual MOSFET gate driver

Features

* The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a halfbridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both lo

Applications

* VDD(PWM) VDD C Rboot VIN HB
* Automotive product qualification in accordance with AEC-Q100 (Grade 1)
* Specified from -40 °C to +125 °C
* Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
* Output signals with 1 ns propagation d

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NGD4300-Q100 peak high-performance dual MOSFET gate driver nexperia

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