Datasheet4U Logo Datasheet4U.com

GANE3R9-150QBA - Gallium Nitride (GaN) FET

Datasheet Summary

Description

The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package.

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

📥 Download Datasheet

Datasheet preview – GANE3R9-150QBA

Datasheet Details

Part number GANE3R9-150QBA
Manufacturer nexperia
File Size 299.24 KB
Description Gallium Nitride (GaN) FET
Datasheet download datasheet GANE3R9-150QBA Datasheet
Additional preview pages of the GANE3R9-150QBA datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
VQFN7 GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 2024 Product data sheet 1. General description The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm 3.
Published: |