Description
Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package.
Features
- Dual MOSFET.
- two silicon dies in one LFPAK56D package for significant space saving.
- Fully automotive qualified to AEC-Q101:.
- 175 °C rating suitable for thermally demanding environments.
- Trench 15 e-TBO technology:.
- Merging benefits of superjunction technology (high ruggedness) and split-gate technology (low RDSon).
- Fast and efficient switching with high damping and low spiking.
- Tight VGS(th) limits enable easy paralleling o.
BUK7K3R7-40N-nexperia.pdf
