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BUK6Q8R2-30P - 30V P-channel Trench MOSFET

BUK6Q8R2-30P Description

BUK6Q8R2-30P 30 V, P-channel Trench MOSFET 2 June 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) SurfaceMounted Device (SMD) plastic package using Trench MOSFET tec.

BUK6Q8R2-30P Features

* Logic-level compatible
* Trench MOSFET technology
* Side-wettable flanks for optical solder inspection
* Thermally efficient package in a small form factor (3.3 mm x 3.3 mm footprint)

BUK6Q8R2-30P Applications

* Reverse polarity protection
* High-speed line driver
* High-side load switch
* Relay driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipat

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30V P-channel Trench MOSFET nexperia
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