BUK4D60-30 - N-channel MOSFET

Name: BUK4D60-30
SKU: BUK4D60-30-1515736

nexperia

📥 Download Datasheet

BUK4D60-30 Datasheet Preview — Preview of BUK4D60-30 PDF

Datasheet Details

Part number	BUK4D60-30
Manufacturer	nexperia
File Size	296.66 KB
Description	N-channel MOSFET
Datasheet	BUK4D60-30-nexperia.pdf

BUK4D60-30 Product details

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Extended temperature range Tj = 175 °C.
Trench MOSFET technology.
Very fast switching.
Side wettable flanks for optical solder inspection.
ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C).
AEC-Q101 qualified 3.

📁 BUK4D60-30 Similar Datasheet

BUK416-1000AE - Power MOS Transistor (NXP)
BUK416-1000BE - Power MOS Transistor (NXP)
BUK416-100AE - Power MOS Transistor (NXP)
BUK416-100BE - Power MOS Transistor (NXP)
BUK416-200AE - Power MOS Transistor (NXP)
BUK416-200BE - Power MOS Transistor (NXP)
BUK417-500AE - Power MOS Transistor (NXP)
BUK417-500BE - Power MOS Transistor (NXP)

Other Datasheets by nexperia

BUK139-50DL - TOPFET
BUK6607-55C - N-channel MOSFET
BUK6607-75C - N-channel MOSFET
BUK661R6-30C - N-channel TrenchMOS intermediate level FET
BUK661R8-30C - N-channel MOSFET
BUK661R9-40C - N-channel TrenchMOS intermediate level FET

Published: Aug 13, 2023 |