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BSS63-Q - PNP high-voltage transistor

Description

PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • Low current (max. 100 mA).
  • High voltage (max. 100 V).
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number BSS63-Q
Manufacturer Nexperia
File Size 175.31 KB
Description PNP high-voltage transistor
Datasheet download datasheet BSS63-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS63-Q PNP high-voltage transistor 10 June 2022 Product data sheet 1. General description PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 100 V) • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • High-voltage general purpose • Switching applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current hFE DC current gain Conditions open base VCE = -1 V; IC = -10 mA; Tamb = 25 °C Min Typ Max Unit - - -100 V - - 30 - -100 mA - 5. Pinning information Table 2.
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