BAV99S-Q Datasheet - nexperia

BAV99S-Q High-speed switching diode

BAV99S-Q Features

* High switching speed: trr ≤ 4 ns

* Low capacitance: Cd ≤ 1.5 pF

* Low leakage current

* Reverse voltage: VR ≤ 100 V

* Very small SMD plastic packages

* Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Application

Datasheet Details

BAV99S-Q

205.69 KB

High-speed switching diode.

📁 Related Datasheet

BAV99S Surface Mount Fast Switching Diodes (GME)

BAV99S Silicon Switching Diode (Infineon Technologies AG)

BAV99S HIGH-SPEED SWITCHING DIODE (JCET)

BAV99S High-speed double diode (Philips)

BAV99S High-speed switching diodes (nexperia)

BAV99S 250mW High Speed Switching Array (Taiwan Semiconductor)

BAV99S Surface Mount Fast Switching Diodes (LGE)

BAV99S SURFACE MOUNT SWITCHING DIODES (Pan Jit International)

TAGS

BAV99S-Q High-speed switching diode nexperia

BAV99S-Q Distributor