10N60 Datasheet (nELL) - N-Channel Power MOSFET

10N60, N-Channel Power MOSFET

The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

They are designed for use in applications such as switched mode power supplies, DC to D

10N60 Features

* RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57nC max.) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (10N60A) GDS TO-220F (10N60AF) D G S TO-263(D2PAK) (10N6