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MX2012E - Dual N-Channel Enhancement Mode Power MOSFET

The MX2012E by imosemi is a Dual N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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MX2012E Dual N-Channel Enhancement Mode Power MOSFET by imosemi - Datasheet Preview — Official preview page of the MX2012E Dual N-Channel Enhancement Mode Power MOSFET datasheet (imosemi).

Datasheet Details

Part number	MX2012E
Manufacturer	imosemi
File Size	449.02 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MX2012E-imosemi.pdf
Additional preview pages of the MX2012E datasheet.

MX2012E Product details

Description

The MX2012E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

VDS=20V, ID=8A RDS(ON)(Typ. )=8.5mΩ @ VGS=4.5V RDS(ON)(Typ. )=10mΩ @ VGS=2.5V.
Surface-mounted package.
Advanced trench cell design.
Extremely low threshold voltage.
ESD protected (HBM>2KV).

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Published: Jul 22, 2025 |