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UCC21750-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver

UCC21750-Q1 Description

UCC21750-Q1 SLUSDH9C * SEPTEMBER 2019 * REVISED JANUARY 2023 UCC21750-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driv.
The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced p.

UCC21750-Q1 Features

* 5.7-kVRMS single channel isolated gate driver

UCC21750-Q1 Applications

* Device temperature grade 0: -40°C to +150°C ambient operating temperature range
* Device HBM ESD classification level 3A
* Device CDM ESD classification level C6
* SiC MOSFETs and IGBTs up to 2121Vpk
* 33-V maximum output drive voltage (VDD
* VEE)

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10-A Source Sink Reinforced Isolated Single Channel Gate Driver Texas Instruments
Texas Instruments UCC21750-Q1-like datasheet