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TPS1100Y - SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Download the TPS1100Y datasheet PDF. This datasheet also covers the TPS1100 variant, as both devices belong to the same single p-channel enhancement-mode mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

The TPS1100 is a single P-channel enhancement-mode MOSFET.

The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process.

1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-

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Note: The manufacturer provides a single datasheet file (TPS1100-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

Part Number Description
TPS1100 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101 SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1110 SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.5 V Max D Available in Ultrathin TSSOP Package (PW) D ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOS™ process. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern.
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