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SN74ABT652A - OCTAL REGISTERED TRANSCEIVERS

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SN54ABT652A, SN74ABT652A OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS072F JANUARY 1991

SN54ABT652A .

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 D Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C D High-Drive Outputs (–32-mA IOH, 64-mA IOL) D Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (NT) and Ceramic (JT) DIPs description SN54ABT652A, SN74ABT652A OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS072F – JANUARY 1991 – REVISED MAY 1997 SN54ABT652A . . . JT OR W PACKAGE SN74ABT652A . . .
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