Datasheet Details
Part number:
LMG3526R030, LMG3522R030
Manufacturer:
File Size:
3.11 MB
Description:
Gan fet.
Note:
This datasheet PDF includes multiple part numbers: LMG3526R030, LMG3522R030.
Please refer to the document for exact specifications by model.
LMG3526R030, LMG3522R030, GaN FET
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns.
TI’s integrated precision g
LMG3526R030 Features
* 650V GaN-on-Si FET with integrated gate driver
* Integrated high precision gate bias voltage
* 200V/ns FET hold-off
* 2MHz switching frequency
* 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
* Operates from
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