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LMG3526R030 - GaN FET

Download the LMG3526R030 datasheet PDF. This datasheet also covers the LMG3522R030 variant, as both devices belong to the same gan fet family and are provided as variant models within a single manufacturer datasheet.

Description

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns.

Features

  • 650V GaN-on-Si FET with integrated gate driver.
  • Integrated high precision gate bias voltage.
  • 200V/ns FET hold-off.
  • 2MHz switching frequency.
  • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
  • Operates from 7.5V to 18V supply.
  • Robust protection.
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response.
  • Withstands 720V surge while hard-switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LMG3522R030-etcTI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Texas Instruments

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LMG3522R030 GaN FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMG3522R030, LMG3526R030 SNOSDF3A – NOVEMBER 2022 – REVISED MAY 2024 LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting 1 Features • 650V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 2MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.
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