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CSD25213W10 - P-Channel Power MOSFET

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Part number CSD25213W10
Manufacturer Texas Instruments
File Size 1.25 MB
Description P-Channel Power MOSFET
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Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. 20 V Qg Gate Charge Total (4.5V) 2.2 nC Qgd Gate Charge Gate to Drain 0.14 nC RDS(on) Drain to Source On Resistance VGS = 2.5V 54 mΩ VGS = 4.5V 39 mΩ VGS(th) Threshold Voltage 0.85 V ORDERING INFO

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