CSD17309Q3 Datasheet (Texas Instruments)

CSD17309Q3, N-Channel MOSFET

This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charg

CSD17309Q3 Features

* 1 Optimized for 5 V Gate Drive

* Ultra-Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Pb Free Terminal Plating

* RoHS Compliant

* Halogen Free

* SON 3.3 mm × 3.3 mm Plastic Package 2 Applications

* Notebook Point o