CPD93V Datasheet (centralsemi) - High Current Switching Diode

CPD93V, High Current Switching Diode

PROCESS CPD93V Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 12.8 x 12.8 MILS 7.1 MILS 5.1 x 5.1 MILS Al - 30,000Å Au-As - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 63,904 PRINCIPAL DEVICE TYPES CMPD4150 BAS56 R2 (22-March 2010) w w w.

c e n t r a l s e m i .

c o m http://www.Datasheet4U.com PROCESS CPD93V Typical Electrical Characteristics R2 (22-Ma