CPD89V Datasheet (centralsemi) - High Current Diode

CPD89V, High Current Diode

PROCESS CPD89V Switching Diode High Current Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 12.8 x 12.8 MILS 7.1 MILS 5.1 x 5.1 MILS Al - 30,000Å Au-As - 10,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 103,344 PRINCIPAL DEVICE TYPES CMPD1001 SERIES CMPD5001 SERIES R1 (22-March 2010) w w w.

c e n t r a l s e m i .

c o m http://www.Datasheet4U.com PROCESS CPD89V Typical Electrical Characteristics R