CP379X Datasheet (centralsemi) - N-Channel Enhancement-Mode Transistor Chip

CP379X, N-Channel Enhancement-Mode Transistor Chip

PROCESS Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip CP379X PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 31.5 x 31.5 MILS 5.5 MILS 3.9 x 3.9 MILS 19.3 x 21.3 MILS Al-Si - 35,000Å Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 24,000 PRINCIPAL DEVICE TYPE CMPDM7002AHC R0 (20-September 2010) w w w.

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