ZHCS506 - SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT

Zetex (Diodes Incorporated)

Key Features

Low V F.
High Current Capability.

ZHCS506 silicon high current schottky barrier diode superbat by Zetex (Diodes Incorporated) - Datasheet Preview

Datasheet Details

Part number	ZHCS506
Manufacturer	Zetex (Diodes Incorporated)
File Size	101.10 KB
Description	SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
Datasheet	ZHCS506 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1 - September 1997 FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S56 7 1 ZHCS506 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 500mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 500 630 1000 5.5 2.5 330 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).