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ZC826 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES

General Description

A range of silicon varactor diodes for use in frequency control and filtering.

Featuring closely controlled CV characteristics and high Q.

Low reverse current ensures very low phase noise performance.

Key Features

  • Close tolerance C-V characteristics.
  • High tuning ratio.
  • Low IR (typically 200pA).
  • Excellent phase noise performance.
  • High Q.
  • Range of miniature surface mount packages.

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Other Datasheets by Zetex (Diodes Incorporated)

Part Number Description
ZC820 SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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ZC822 SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages. Features · Close tolerance C-V characteristics · High tuning ratio · Low IR (typically 200pA) · Excellent phase noise performance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communications · Pagers · Mobile radio *Where steeper CV slopes are required there is the 12V hyperabrupt range.