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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998 FEATURES
FCX617
C
*
* * * *
2W POWER DISSIPATION
12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A
E C B
Partmarking Detail -
617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 15 15 5 12 3 500 1 † 2 ‡ -55 to +150 UNIT V V V A A mA W W °C
† recommended Ptot calculated using FR4 measuring 15x15x0.