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2N6727 - PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features

  • 40 Volt VCEO.
  • Gain of 50 at IC = 1 Amp.
  • Ptot=1 Watt 2N6726 2N6727 C B E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt 2N6726 2N6727 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 2N6726 -40 -30 -5 -2 -1 1 E-Line TO92 Compatible 2N6727 -50 -40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
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