Datasheet4U Logo Datasheet4U.com

MAR5104 - RADIATION HARD 4096 x 1 BIT STATIC RAM

Datasheet Summary

Features

  • s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU.

📥 Download Datasheet

Datasheet preview – MAR5104

Datasheet Details

Part number MAR5104
Manufacturer Zarlink Semiconductor
File Size 201.97 KB
Description RADIATION HARD 4096 x 1 BIT STATIC RAM
Datasheet download datasheet MAR5104 Datasheet
Additional preview pages of the MAR5104 datasheet.

📁 Similar Datasheet

  • MAR517 - NPN 1GHz wideband transistor (HOPERF)
  • MAR-1+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-1SM - Surface Mount Monolithic Amplifier (Mini-Circuits)
  • MAR-2+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-3+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-3SM+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-4+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-6+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-6SM+ - Monolithic Amplifier (Mini-Circuits)
  • MAR-7+ - Monolithic Amplifier (Mini-Circuits)
Other Datasheets by Zarlink Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    www.DataSheet4U.com Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ APRIL 1995 MA5104 www.DataSheet4U.com DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.
    Published: |