Datasheet Details
| Part number | CJD04N60B |
|---|---|
| Manufacturer | ZPSEMI |
| File Size | 724.35 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 CJD04N60B-ZPSEMI.pdf
|
| Part number | CJD04N60B |
|---|---|
| Manufacturer | ZPSEMI |
| File Size | 724.35 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
CJD04N60B-ZPSEMI.pdf
|
This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.TO-251S 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z
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