ZN65C1R070L - 650V GaN FET

Datasheet Details

The ZN65C1R070L is a 650V, 70 mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package.

JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Wide gate safety margin.
Capable of reverse conduction.
Low gate charge.
RoHS compliant and Halogen-free packaging.
Achieves increased efficiency in both hard- and soft- switched circuits - Increased power density - Reduced system size and weight - Overall lower system cost.
Easy to drive with commonly-used gate drivers 3.

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Published: Nov 3, 2025 |