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C2062 - NPN Transistor

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Part number C2062
Manufacturer Yuejing
File Size 97.27 KB
Description NPN Transistor
Datasheet download datasheet C2062 Datasheet
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    GuangDong Yuejing High Technology CO.,LTD. ■■APPLICATION：High-Gain Amplifier. C2062 —NPN silicon — ■■MAXIMUM RATING（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg ﹣55~150 ℃ ■■ ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 10K VCE= 3 V，Ic=100 mA Collector Cut-off Current ICBO 0.1 µA VCB= 30 V，IE=0 Emitter Cut-off Current IEBO 0.1 µA VEB= 10 V，Ic=0 Collector-Base Breakdown Voltage BVCBO 40 V Ic= 0.
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