YJQ4666A - P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

YJQ4666A Description

YJQ4666A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-4.5V) * RD.
Trench Power LV MOSFET technology. Low RDS(ON). Low Gate Charge Applications. Battery charge. Load switching in Cellular ha.

YJQ4666A Applications

* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current TA=25℃ TA=70℃ Pulsed Drain Current A Total Powe

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Datasheet Details

Part number: YJQ4666A
Manufacturer: Yangzhou Yangjie
File Size: 554.98 KB
Datasheet: YJQ4666A-YangzhouYangjie.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

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