Datasheet Details
- Part number
- YJB150N06BQ
- Manufacturer
- Yangzhou Yangjie
- File Size
- 529.20 KB
- Datasheet
- YJB150N06BQ-YangzhouYangjie.pdf
- Description
- N-Channel Enhancement Mode Field Effect Transistor
YJB150N06BQ Description
YJB150N06BQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * 1.
Trench Power MV MOSFET technology.
Excellent package for heat dissipation.
High density cell design for low RDS(ON)
Applications.
YJB150N06BQ Applications
* DC-DC Converters
* Power management functions
* Industrial and Motor Drive applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
Drain Current Pulsed Drain Current A
TC=25℃ TC=100℃
Total
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