YJB150N06BQ - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Industrial and Motor Drive applications
Absolute Maximum Ratings (TA=25℃unless otherw
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YJB150N06BQ
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● 100% UIS Tested ● 100% ▽VDS Tested
60V 150A <5.