Datasheet Details
| Part number | 2N7002KDW |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 837.13 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
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The 2N7002KDW by Yangzhou Yangjie is a N-Channel Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.
| Part number | 2N7002KDW |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 837.13 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
|
|
|
|
Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interface:TTL/CMOS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current ID TA=70℃ @ Steady
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