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2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor

The 2N7002KDW by Yangzhou Yangjie is a N-Channel Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.

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Official preview page of the 2N7002KDW N-Channel Enhancement Mode Field Effect Transistor datasheet (Yangzhou Yangjie).

Datasheet Details

Part number 2N7002KDW
Manufacturer Yangzhou Yangjie
File Size 837.13 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet 2N7002KDW-YangzhouYangjie.pdf
Additional preview pages of the 2N7002KDW datasheet.

2N7002KDW Product details

Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interface:TTL/CMOS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current ID TA=70℃ @ Steady

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