Datasheet Details
| Part number | XP4955GM | 
|---|---|
| Manufacturer | YAGEO | 
| File Size | 242.08 KB | 
| Description | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 
| Datasheet |  XP4955GM-YAGEO.pdf | 
 
		  | Part number | XP4955GM | 
|---|---|
| Manufacturer | YAGEO | 
| File Size | 242.08 KB | 
| Description | DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 
| Datasheet |  XP4955GM-YAGEO.pdf | 
D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID -20V 45mΩ -5.6A XP4955 series are innovated design and silicon process D1 D2 technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power G1 G2 applications.The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or sw
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