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XP3C011H - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number XP3C011H
Manufacturer YAGEO
File Size 212.28 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP3C011H Product details

Description

TO-252-4L XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G1 G2 S1 30V 10mΩ 12A -30V 22mΩ -12A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source

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