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E3M0075120J2 - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology Tab.
  • Optimized package with separate driver source pin Drain.
  • 4.7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits 1234567 Drai.

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Full PDF Text Transcription (Reference)

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E3M0075120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 4.