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CCB016M12GM3 - Silicon Carbide Six-Pack Module

Features

  • Ultra-Low Loss.
  • High Frequency Operation.
  • Zero Turn-Off Tail Current from MOSFET.
  • Normally-Off, Fail-Safe Device Operation.
  • Optional Pre-Applied Thermal Interface Material 5 D VDS R4 DS(on) 3 1200 V 16 mΩ 2 1 D DC+ (4x) DC+ (2x) C C G1 G3 G5 S1 S3 S5 U V W NTC1 G2 G4 G6 S2 S4 S6 -t° NTC2 B B DC- 1 DC- 2 DC- 3 Typical.

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CCB016M12GM3, CCB016M12GM3T 1200 V, 16 mΩ, Silicon Carbide, Six-Pack Module Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material 5 D VDS R4 DS(on) 3 1200 V 16 mΩ 2 1 D DC+ (4x) DC+ (2x) C C G1 G3 G5 S1 S3 S5 U V W NTC1 G2 G4 G6 S2 S4 S6 -t° NTC2 B B DC- 1 DC- 2 DC- 3 Typical Applications • DC-DC Converters • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation A 5 4 3 2 System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • Reduced Thermal Requirements and Sy
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