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C6D25170H - 25A Silicon Carbide Schottky Diode

Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
  • Zero Reverse Recovery Current / Forward Recovery Voltage.
  • Temperature-Independent Switching Behavior.

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Datasheet Details

Part number C6D25170H
Manufacturer Wolfspeed
File Size 564.79 KB
Description 25A Silicon Carbide Schottky Diode
Datasheet download datasheet C6D25170H Datasheet

Full PDF Text Transcription (Reference)

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C6D25170H 6th Generation 1700 V, 25 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
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