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C6D20065D1 - 20A Silicon Carbide Schottky Diode

Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Features

  • Typical.

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Datasheet Details

Part number C6D20065D1
Manufacturer Wolfspeed
File Size 845.45 KB
Description 20A Silicon Carbide Schottky Diode
Datasheet download datasheet C6D20065D1 Datasheet

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Full PDF Text Transcription (Reference)

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C6D20065D1 6th Generation 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
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