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C6D10065A - 10A Silicon Carbide Schottky Diode

Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
  • Zero Reverse Recovery Current / Forward Recovery Voltage.
  • Temperature-Independent Switching Behavior Typical.

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Datasheet Details

Part number C6D10065A
Manufacturer Wolfspeed
File Size 1.69 MB
Description 10A Silicon Carbide Schottky Diode
Datasheet download datasheet C6D10065A Datasheet

Full PDF Text Transcription (Reference)

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C6D10065A 6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Package Types: TO-220-2 Marking: C6D10065 Wolfspeed, Inc.
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