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WFU4N65S Power MOSFET

WFU4N65S Description

WFU4N65S Product .
650V Super-Junction Power MOSFET Features. Ultra low Rdson. Ultra low gate charge (typ. 100% UIS tested. RoHS compliant.

WFU4N65S Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =13nC)
* 100% UIS tested

WFU4N65S Applications

* which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Continuous Drain Current (Tc=25℃) ID (Tc=100℃) Parameter I DM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) I AR Single P

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Datasheet Details

Part number
WFU4N65S
Manufacturer
Winsemi
File Size
147.90 KB
Datasheet
WFU4N65S-Winsemi.pdf
Description
Power MOSFET

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Power MOSFET Winsemi
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